(China (Mainland))
Product Summary
The BQ4014YMB-85 is a nonvolatile 2,097,152-bit static RAM organized as 262,144 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited write cycles of standard SRAM.
Parametrics
BQ4014YMB-85 absolute maximum ratings: (1)VCC DC voltage applied on VCC relative to VSS; -0.3 to 7.0 V; (2)VT DC voltage applied on any pin excluding VCC relative to VSS: -0.3 to 7.0 V; (3)TOPR Operating temperature: 0 to +70℃; (4)TSTG Storage temperature: -40 to +70℃; (5)TBIAS Temperature under bias: -10 to +70℃; (6)TSOLDER Soldering temperature: +260℃.
Features
BQ4014YMB-85 features: (1)Data retention in the absence of power; (2)Automatic write-protection during power-up/power-down cycles; (3)Industry-standard 32-pin 256K × 8 pinout; (4)Conventional SRAM operation; unlimited write cycles; (5)10-year minimum data retention in absence of power; (6)Battery internally isolated until power is applied.
Diagrams
| Image | Part No | Mfg | Description |  |
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 BQ4014YMB-85 |
Texas Instruments |
NVRAM 256Kx8 Nonvolatile SRAM |
Data Sheet |
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Other |
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NVRAM 8Kx8 Nonvolatile SRAM |
Data Sheet |
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