4N40

power field effect transistor, dip-6, 400 V, 23.5 mJ, 23 A, 4N40

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Price:: US $0.85~1.22 / piece [Get Latest Price]

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	US $0.85~1.22

PartNumber:: 4N40

Brand:: Fairchild Semiconductor - Fairchild | Pack: DIP | D/C: 10+

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Products Upload time: 2012-07-14

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Part Number:4N40
US $0.85 - 1.22
IRF9540NPBF

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Product Summary

The 4N40 is an N-Channel enhancement mode power field effect transistor. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The 4N40 is well suited for high efficient switched mode power supplies and active power factor correction.

Parametrics

4N40 absolute maximum ratings: (1)VDSS Drain to Source Voltage 400 V; (2)VGSS Gate to Source Voltage ±30 V; (3)ID Drain Current: 23A; (4)IDM Drain Current - Pulsed: 92 A; (5)EAS Single Pulsed Avalanche Energy: 1190 mJ; (6)IAR Avalanche Current: 23 A; (7)EAR Repetitive Avalanche Energy: 23.5 mJ; (8)dv/dt Peak Diode Recovery dv/dt: 4.5 V/ns; (9)PD Power Dissipation: 235 W; (10)TJ, TSTG Operating and Storage Temperature Range: -55 to +150℃.

Features

4N40 features: (1)RDS(on) = 0.15Ω ( Typ.)@ VGS = 10V, ID = 11.5A; (2)Low gate charge (Typ. 46nC); (3)Low Crss (Typ.25pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt apability; (7)RoHS compliant.