Product Summary
The 3N165 is a monolithic dual p-channel enhancement mode mosfet.
Parametrics
3N165 absolute maximum ratings: (1)Transient G-S Voltage: ±125 V; (2)Gate-Gate Voltage: ±80 V; (3)Drain Current: 50 mA; (4)Storage Temperature: -65℃ to +200℃; (5)Operating Temperature: -55℃ to +150℃; (6)Lead Temperature (Soldering, 10 sec.): +300℃; (7)Power Dissipation (One Side): 300 mW; (8)Total Derating above 25℃: 4.2 mW/℃.
Features
3N165 feature: (1)Very high input impedance; (2)High gate breakdown; (3)Ultra low leakage; (4)Low capacitance.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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3N165 |
Other |
Data Sheet |
Negotiable |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
3N163 |
Vishay/Siliconix |
MOSFET 40V 5mA 375mW |
Data Sheet |
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3N163-E3 |
Vishay/Siliconix |
MOSFET 40V 5mA 375mW |
Data Sheet |
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3N165 |
Other |
Data Sheet |
Negotiable |
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3N166 |
Other |
Data Sheet |
Negotiable |
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3N164-E3 |
Vishay/Siliconix |
MOSFET 30V 3mA 375mW |
Data Sheet |
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3N164 |
Vishay/Siliconix |
MOSFET 30V 3mA 375mW |
Data Sheet |
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