Product Summary
The 2N3993 is a P-channel junction field effect transistor.
Parametrics
2N3993 absolute maximum ratings: (1)drain-source voltage, VDS: -25Vdc; (2)drain-gate voltage, VDG: -25Vdc; (3)inverse gate-source voltage, VGSR: 25Vdc; (4)forward gate current, IGF: 10mAdc; (5)totaldevice dissipation, PD: 300mW; (6)storage temperature range, Tstg: -65 to 200℃.
Features
2N3993 features: (1)gate-source breakdown voltage, V(BR)GSS: 25Vdc; (2)drain reverse current, IDGO: 1.2nAdc; (3)drain cutoff current, ID(off): 1.2nAdc.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||
---|---|---|---|---|---|---|---|---|---|---|
2N3993 |
Other |
Data Sheet |
Negotiable |
|
||||||
2N3993A |
Other |
Data Sheet |
Negotiable |
|